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FDN327N - High performance trench technology for extremely low RDS(ON)

FDN327N_7550132.PDF Datasheet

 
Part No. FDN327N
Description High performance trench technology for extremely low RDS(ON)

File Size 149.09K  /  2 Page  

Maker

TY Semiconductor Co., Ltd



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: FDN301
Maker: MOTOROLA(摩托罗拉)
Pack: SOP
Stock: 2060
Unit price for :
    50: $3.72
  100: $3.54
1000: $3.35

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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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